西門康IGBTSKM100GB125DN兩單元封裝,芯片使用SPT技術(shù),飽和壓降約為2.0伏左右,開關(guān)損耗比NPT技術(shù)的IGBT模塊降低20%左右，西門康IGBTSKM100GB125DN完全可以在逆變焊機中使用,西門康IGBTSKM100GB125DN可以使用在315安到500安的電焊機中,.5千瓦以上的變頻器中等。SKM50GAL123D、SKM75GAL123D、SKM100GAL123D、SKM145GAL123D、
SKM145GAL124D、SKM150GAL123D、SKM195GAL124DN、SKM200GAL123D、SKM200GAL125D、SKM300GAL123D、
SKM400GAL125D、SKM300GA123D、SKM400GA123D、SKM400GA124D、SKM500GA123D、SKM50GAR123D、
SKM75GAR123D、SKM100GAR123D、SKM145GAR123D、SKM145GAR124DN、SKM150GAR123D、SKM195GAR124DN、
SKM200GAR123D、SKM200GAR125D、SKM300GAR123D、SKM400GAR124D、SKM400GAR125D、SKM500GA124D、
SKM600GA124D、SKM400GA173D、SKM500GA173D。